Comparative study of ion channeling and implantation into Si(110), SiC(110), GaP(110), AsGa(110).
| Autor: | Rasulov, A. M., Dzhurakhalov, A. A., Umarov, F. F., Sultonov, Sh. D., Khaydarov, A. |
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| Zdroj: | Proceedings of SPIE; Nov2005 Part 2, Issue 1, p59740I-59740I-5, 5p |
| Databáze: | Complementary Index |
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