High quantum efficiency AlxGa1-xN/GaN-based ultraviolet p-i-n photodetectors with a recessed window structure.
Autor: | Li, Ting, Wang, Shuling, Beck, Ariane L., Collins, Charles J., Yang, Bo, Dupuis, Russell D., Carrano, John C., Schurman, Matthew J., Ferguson, Ian T., Campbell, Joe C. |
---|---|
Zdroj: | Proceedings of SPIE; Nov2000 Part 2, Issue 1, p304-310, 7p |
Databáze: | Complementary Index |
Externí odkaz: |