Type-II diode lasers based on interface recombination at 3.3m.

Autor: Krier, Anthony, Wright, Derek A., Ellarby, Victoria J., Sherstnev, Victor V., Moiseev, Konstantin D., Yakovlev, Yury P.
Zdroj: Proceedings of SPIE; Nov2002, Issue 1, p193-202, 10p
Databáze: Complementary Index