Type-II diode lasers based on interface recombination at 3.3m.
Autor: | Krier, Anthony, Wright, Derek A., Ellarby, Victoria J., Sherstnev, Victor V., Moiseev, Konstantin D., Yakovlev, Yury P. |
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Zdroj: | Proceedings of SPIE; Nov2002, Issue 1, p193-202, 10p |
Databáze: | Complementary Index |
Externí odkaz: |