EUV mask absorber defect size requirement at 100-nm design rules.
| Autor: | Yan, Pei-yang, Zhang, Guojing, Chow, Jenn, Kofron, Patrick, Langston, Joseph C., Solak, Harun H., Kearney, Patrick A., Cardinale, Gregory F., Berger, Kurt W., Henderson, Craig C. |
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| Zdroj: | Proceedings of SPIE; Nov1998 Part 2, Issue 1, p638-645, 8p |
| Databáze: | Complementary Index |
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