1.3-m optoelectronic devices on GaAs using group III-nitride-arsenides.
| Autor: | Spruytte, Sylvia G., Wistey, Mark A., Larson, Michael C., Coldren, Christopher W., Garrett, Henry E., Harris Jr., James S. |
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| Zdroj: | Proceedings of SPIE; Nov2001, Issue 1, p22-33, 12p |
| Databáze: | Complementary Index |
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