| Autor: |
Yang, Shinhyuk, Hwan Ji, Kwang, Ki Kim, Un, Seong Hwang, Cheol, Ko Park, Sang-Hee, Hwang, Chi-Sun, Jang, Jin, Kyeong Jeong, Jae |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/5/2011, Vol. 99 Issue 10, p102103, 3p, 4 Graphs |
| Abstrakt: |
This study examined the effect of oxygen plasma treatment on light-enhanced bias instability in Zn-Sn-O (ZTO) thin film transistors (TFTs). The treated ZTO TFT exhibited only a threshold voltage (Vth) shift of -2.05 V under negative bias illumination stress (NBIS) conditions, whereas the pristine device suffered from a negative Vth shift of 3.76 V under identical conditions. X-ray photoelectron spectroscopic analysis revealed that the oxygen vacancy defect density was diminished via the oxygen plasma treatment. This suggests the Vth degradation under NBIS is due to photo-transition of oxygen vacancy defects. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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