| Autor: |
Böscke, T. S., Teichert, St., Bräuhaus, D., Müller, J., Schröder, U., Böttger, U., Mikolajick, T. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/12/2011, Vol. 99 Issue 11, p112904, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
We investigated phase transitions in ferroelectric silicon doped hafnium oxide (FE-Si:HfO2) by temperature dependent polarization and x-ray diffraction measurements. If heated under mechanical confinement, the orthorhombic ferroelectric phase reversibly transforms into a phase with antiferroelectric behavior. Without confinement, a transformation into a monoclinic/tetragonal phase mixture is observed during cooling. These results suggest the existence of a common higher symmetry parent phase to the orthorhombic and monoclinic phases, while transformation between these phases appears to be inhibited by an energy barrier. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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