Space-charge-limited currents and trap characterization in coaxial AlGaN/GaN nanowires.

Autor: Simpkins, B. S., Mastro, M. A., Eddy, C. R., Hite, J. K., Pehrsson, P. E.
Předmět:
Zdroj: Journal of Applied Physics; Aug2011, Vol. 110 Issue 4, p044303, 4p
Abstrakt: This manuscript presents the first observation of the space-charge-limited current (SCLC) conduction mechanism in individual heterostructure nanowires (NWs). This effect is exploited to extract size-dependent carrier densities and to demonstrate surface-dominated behavior for these technologically relevant nanostructures. Mobile carrier densities were shown to increase from 2.5 × 1016 to 5.6 × 1017 cm-3, as NW width decreased from 200 to 50 nm. This size-dependent behavior is a consequence of the increasing influence of near-surface confined carriers as widths decrease. Traps impact the SCLC response and were characterized as an exponential band edge tail with an average characteristic energy of 75 meV. In addition to the specific materials properties extracted, these results further demonstrate the tendency for low-dimensional materials (1D NWs) to exhibit SCLC at much lower injection fluxes compared to their higher dimensional (2D heterostructure field-effect transistors) counterparts. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index