Influence of surface steps on N incorporation in GaAsN grown by chemical beam epitaxy.

Autor: Nishimura, K., Lee, H. S., Suzuki, H., Kawahigashi, T., Imai, T., Saito, K., Ohshita, Y., Yamaguchi, M.
Zdroj: Physica Status Solidi (C); Sep2006, Vol. 3 Issue 8, p2689-2692, 4p
Databáze: Complementary Index
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