| Autor: |
Beji, L., Jani, B. el, Gibart, P., Portal, J.C., Basmaji, P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/1998, Vol. 83 Issue 10, p5573, 3p, 4 Graphs |
| Abstrakt: |
Provides information on an experiment using hydrostatic pressure to investigate GaAs (doped with Zn and Sn in the p and n parts) tunnel diode I-V characteristics. Methodology used to conduct the study; Delimitation of diodes with an area of 0.12 mm2 by mesa etching; Explanation given for a reduction in peak and valley current; Results of the experiment. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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