ChemInform Abstract: GaAs/InGaP Selective Etching in BCl3/SF6 High-Density Plasmas.

Autor: Hays, D. C., Cho, H., Lee, J. W., Devre, M. W., Reelfs, B. H., Johnson, D., Sasserath, J. N., Meyer, L. C., Toussaint, E., Ren, F., et al., et al.
Zdroj: ChemInform; Jan2000, Vol. 31 Issue 1, pno-no, 1p
Databáze: Complementary Index