ChemInform Abstract: GaAs/InGaP Selective Etching in BCl3/SF6 High-Density Plasmas.
Autor: | Hays, D. C., Cho, H., Lee, J. W., Devre, M. W., Reelfs, B. H., Johnson, D., Sasserath, J. N., Meyer, L. C., Toussaint, E., Ren, F., et al., et al. |
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Zdroj: | ChemInform; Jan2000, Vol. 31 Issue 1, pno-no, 1p |
Databáze: | Complementary Index |
Externí odkaz: |