| Autor: |
Wang, Tao, Boer-Duchemin, Elizabeth, Tranvouez, Edern, Cartwright, Richard, Comtet, Geneviève, Dujardin, Gérald, Mayne, Andrew J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Aug2011, Vol. 110 Issue 3, p034311, 5p |
| Abstrakt: |
A new regime of electrochemical anodic oxidation with an atomic force microscope (AFM) is introduced for producing insulating layers on a hydrogenated diamond surface. In this new regime, when a low surface voltage (VS<+2 V) is applied to the sample, an insulating layer is created without any measurable change in the topography. Insulating layers created in this fashion are shown to preserve the high sub-surface conductance of hydrogenated diamond surfaces, contrary to the oxide layers accompanied by a topographic change, which destroy sub-surface conductance. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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