| Autor: |
Titus, Jeffrey L., Wheatley, C. Frank, Gillberg, James E., Burton, Donald I. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; Dec2001 Part 1 of 3, Vol. 48 Issue 6, p1879, 6p, 2 Black and White Photographs, 1 Chart, 16 Graphs |
| Abstrakt: |
Focuses on a study which examined single-event gate rupture (SEGR) response of improved stripe-cell power metal-oxide-semiconductor field-effect transistors (MOSFET) technology to different ion track characteristics. Structure of the stripe cell; Characteristics of MOSFET target; SEGR test setup and procedure. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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