| Autor: |
Lugo, J. E., Lopez, H. A., Chan, S., Fauchet, P. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/15/2002, Vol. 91 Issue 8, p4966, 7p, 1 Black and White Photograph, 2 Diagrams, 5 Graphs |
| Abstrakt: |
A photonic model for freshly anodized porous silicon multilayer structures is presented. The photonic structures are composed of alternating high and low dielectric function porous silicon layers. The model takes into account the presence of silicon dioxide and its lattice expansion in the porous structure. We work with oxidized structures and our results fit completely the experimentally measured optical shift. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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