| Autor: |
Bezerra, E. F., Caetano, E. W. S., Freire, V. N., Lemos, V., da Costa, J. A. P., da Silva, E. F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/15/2002, Vol. 91 Issue 8, p5208, 5p, 4 Graphs |
| Abstrakt: |
The complex mobility of hot electrons in 3C– and 6H–SiC at 300, 673, and 1073 K is calculated through the numerical solution of balance transport equations within a nonparabolic band picture. The electric field, applied along the hexagonal c axis or [111] direction in the cubic material, is taken as the sum of a strong variable dc (200–800 kV/cm) and a weak (20 kV/cm) ac component whose frequency is varied in the 0.1–100 THz range. The real electron mobility presents a characteristic maximum peaking around 6–10 THz, while the imaginary electron mobility presents a characteristic maximum and minimum peaking around 20–40 THz and 2–5 THz, respectively. At the highest lattice temperature explored, the electron complex mobilities for both hexagonal and cubic SiC polytypes have nearly similar frequency dependent patterns. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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