Erratum: “Ion-channeling analysis of boron clusters in silicon” [J. Appl. Phys. 90, 4741 (2001)].

Autor: Selen, L. J. M., Janssen, F. J. J., van IJzendoorn, L. J., de Voigt, M. J. A., Theunissen, M. J. J., Smulders, P. J. M., Eijkemans, T. J.
Předmět:
Zdroj: Journal of Applied Physics; 4/15/2002, Vol. 91 Issue 8, p5507, 1p
Abstrakt: © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index