| Autor: |
Bae, H. S., Kim, T. G., Whang, C. N., Im, S., Yun, J. S., Song, J. H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/1/2002, Vol. 91 Issue 7, p4078, 4p, 3 Diagrams, 2 Graphs |
| Abstrakt: |
Luminescent silicon oxides containing radiative centers were obtained by using two different techniques. Silicon rich silicon oxides (SRSOs) were fabricated by rf magnetron sputter deposition and Ge-implanted SiO[sub 2] films were fabricated by ion implantation following the thermal oxidation of Si. Blue and violet photoluminescence were observed from the SRSO and the Ge-implanted SiO[sub 2], respectively. However, the electroluminescence (EL) spectra from both oxides exhibited red and near-infrared luminescence bands. Strong EL was observed only under reverse bias conditions on metal-luminescent oxide-semiconductor structures. The EL intensity and peak position were varied with applied voltages. According to the EL and current-voltage measurements, it is concluded that the possible EL mechanism is the impact ionization of ground state electrons in the radiative centers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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