| Autor: |
Volodin, V., Kachko, A., Cherkov, A., Latyshev, A., Koch, J., Chichkov, B. |
| Předmět: |
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| Zdroj: |
JETP Letters; Jul2011, Vol. 93 Issue 10, p603-606, 4p, 1 Black and White Photograph, 1 Diagram, 2 Graphs |
| Abstrakt: |
Femtosecond laser treatments (second harmonic of Ti-sapphire laser, λ ≈ 400 nm wavelength, <30 fs pulse duration) were applied for crystallization of thin hydrogenated amorphous silicon films on glass substrates. The concentration of atomic hydrogen in the films was varied from 10 to ≈35%. The energy densities (laser fluences) for crystallization of the films with thicknesses from 20 to 130 nm were found. Assumedly, non-thermal processes (plasma annealing) take place in phase transition caused ultra-fast pulses. The developed approach can be used for creation of polycrystalline silicon films on non-refractory substrates. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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