Autor: |
Andrianov, V. A., Dmitriev, P. N., Koshelets, V. P., Kozin, M. G., Romashkina, I. L., Sergeev, S. A. |
Předmět: |
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Zdroj: |
AIP Conference Proceedings; 2002, Vol. 605 Issue 1, p161, 4p |
Abstrakt: |
Tunnel junctions Al(0)/Nb/Al(1)/AlO[sub x]/Al(2)/Nb/NbN with bottom electrode Al(0)/Nb/Al(1) as a killed electrode were studied at temperatures 1.35 and 0.3 K. It was found that at T=0.3 K tunneling from the killed electrode, absent at T=1.35 K, appeared. It increases the detector signal and broadens the spectrum. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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