Photovoltaic action from InxGa1-xN p-n junctions with x > 0.2 grown on silicon.
| Autor: | Gherasoiu, Iulian, Reichertz, Lothar A., Yu, Kin Man, Ager, Joel W., Kao, Vincent M., Walukiewicz, Wladek |
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| Zdroj: | Physica Status Solidi (C); Jul2011, Vol. 8 Issue 7/8, p2466-2468, 3p |
| Databáze: | Complementary Index |
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