Optimization of recessed ohmic contacts for AlGaN/AlN/GaN heterostructures using C(V) characterization of MSHM structures.

Autor: Fagerlind, Martin, Rorsman, Niklas
Zdroj: Physica Status Solidi (C); Jul2011, Vol. 8 Issue 7/8, p2204-2206, 3p
Databáze: Complementary Index
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