| Autor: |
Sun, C. J., Yang, J. W., Chen, Q., Lim, B. W., Anwar, M. Zubair, Khan, M. Asif, Temkin, H., Weismann, D., Brenner, I. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/29/1996, Vol. 69 Issue 5, p668, 3p, 3 Graphs |
| Abstrakt: |
In this letter we report the results of room-temperature continuous wave and pulsed photoluminescence measurements on InGaN–GaN single heterojunctions. These InGaN–GaN heterojunctions were deposited over basal plane sapphire substrates using low pressure metalorganic chemical vapor deposition. We suggest the use of vertical cavity stimulated emission instead of spontaneous emission peak position as a good measure of the InGaN band edge. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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