| Autor: |
Beard, W. T., Green, K. A., Zhang, X.-J., Armstrong, R. W. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/22/1996, Vol. 69 Issue 4, p488, 3p, 3 Black and White Photographs, 2 Diagrams, 1 Chart |
| Abstrakt: |
Measurements are reported for x-ray diffraction topography (XRDT) images of implantation and superstructure details in an integrated circuit device investigated with the reflection method of line modified-asymmetric crystal topography (LM-ACT). The x-ray penetration depth and the micron grain size of thin-film nuclear emulsions used to record the diffraction images are shown to limit spatial resolution in the x-ray topographs. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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