| Autor: |
Kim, D. S., Ko, H. S., Kim, Y. M., Rhee, S. J., Hong, S. C., Yee, Y. H., Yee, D. S., Woo, J. C., Choi, H. J., Ihm, J., Woo, D. H., Kang, K. N. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/21/1996, Vol. 69 Issue 17, p2513, 3p, 5 Graphs |
| Abstrakt: |
A significant charge transfer, which differs from tunneling, over thick AlxGa1-xAs barrier in GaAs/AlxGa1-xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-A˚-thick Al0.3Ga0.7As barrier is universally ‘‘leaky’’ with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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