| Autor: |
Izumi, Shigekazu, Sakai, Masayuki, Shimura, Teruyuki, Hayafuji, Norio, Sato, Kazuhiko, Otsubo, Mutsuyuki |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/21/1996, Vol. 69 Issue 17, p2516, 3p, 1 Diagram, 5 Graphs |
| Abstrakt: |
Molecular beam epitaxially grown AlGaAs/GaAs heterojunctions were characterized by isothermal capacitance transient spectroscopy to study the performance of bipolar transistors with lattice-mismatched InGaAs emitter contact layer. A deep level around 0.48 eV is found to be a recombination center in the N-AlGaAs/p+-GaAs junction which might be induced by oxygen. Anomalous signals are also observed under an isothermal condition where the edge of the depletion layer reaches the graded InGaAs/AlGaAs heterointerface. Two electron traps with activation energies of 0.26 and 0.62 eV are identified as dominant factors. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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