| Autor: |
Samukawa, Seiji, Tsukada, Tsutomu |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/19/1996, Vol. 69 Issue 8, p1056, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
Silicon etching characteristics are investigated by using radio-frequency (rf) biased ultrahigh frequency (UHF) and other conventional plasmas (electron cycotron resonance plasma, inductive coupled plasma, surface wave plasma) determined by using a Cl2 etchant. The silicon etching rate and its pattern dependence are significantly improved by decreasing the electron temperature when supplying a 600-kHz rf bias. In particular, use of the UHF plasma allows high-rate and microloading-free silicon trench etching. It is suggested that a larger number of negative ions are generated in the UHF plasma because of the extremely low electron temperature. The low-frequency bias accelerates the negative and positive ions alternately to the substrate surface. As a result, the low-frequency biased UHF plasma reduces the charge accumulation on the substrate. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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