| Autor: |
Chen, Ching-Hui, Hu, Evelyn L., Mishra, Umesh K., Ibbetson, James P., Wu, Xuehua, Speck, Jim S. |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 9/16/1996, Vol. 69 Issue 12, p1728, 3p, 1 Diagram, 1 Chart, 3 Graphs |
| Abstrakt: |
A thin capping layer of annealed GaAs (∼210 A˚) grown at low temperature (LT-GaAs) can effectively block incident ions from penetrating into the growth substrate. Ion-bombarded, multiple quantum well structures capped by an annealed LT-GaAs layer show a dramatic improvement in the photoluminescence, compared to samples capped with ‘‘normal’’ GaAs. The improvement appears to be correlated with the microstructures of the LT-GaAs, since the improvement is particularly notable for samples annealed at 600 °C. This improvement in low energy ion-induced damage is primarily the result of the reduced channeling of ions through the LT-GaAs layer. These results suggest a potential application of LT-GaAs in reducing ion damage and underscore the importance of the microstructure of arsenic precipitates in LT-GaAs layers. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
