| Autor: |
Komuro, Shuji, Maruyama, Shinya, Morikawa, Takitaro, Zhao, Xinwei, Isshiki, Hideo, Aoyagi, Yoshinobu |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/16/1996, Vol. 69 Issue 25, p3896, 3p, 4 Graphs |
| Abstrakt: |
We present a useful and simple technique to prepare controllable Er-doped Si thin films using KrF excimer laser ablation. The sharp intense photoluminescence (PL) at 1.54 μm originating from the intra-4f shell transition in Er3+ ions was observed from 18 K up to room temperature. Characteristics of PL thermal quenching and time decay of prepared Er-doped Si thin films are very similar to those of Er-doped porous Si and/or Er-doped amorphous Si. Furthermore, observation of Er3+ emission from as-prepared thin films without thermal annealing suggests that the Er doping in the form of Er atomic radical species produced by laser ablation is essential in activation of Er3+ ions. Moreover, incorporating a prescribed amount of Er in the bulk target enables us to control the Er doping level in thin films prepared by laser ablation. © 1996 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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