| Autor: |
Theys, Bertrand, Sallet, Vincent, Jomard, Franc¸ois, Lusson, Alain, Rommelue`re, Jean-Franc¸ois, Teukam, Ze´phyrin |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/2002, Vol. 91 Issue 6, p3922, 3p, 2 Graphs |
| Abstrakt: |
Unintentionally doped ZnO layers grown epitaxially on a sapphire substrate have been exposed either to a hydrogen or deuterium plasma. Secondary ion mass spectroscopy measurements performed subsequently showed a rapid diffusion of hydrogen in these layers. Furthermore, the presence of hydrogen in the ZnO samples is found to be responsible for nearly a factor of 3 increase in the free electron concentration. This effect is attributed to the hydrogen passivation of compensating acceptor impurities present in the as-grown ZnO layers. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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