Disorder-Activated Scattering and Two-Mode Behavior in Raman Spectra of Isotopic GaN and AlGaN.

Autor: Wieser, N., Ambacher, O., Angerer, H., Dimitrov, R., Stutzmann, M., Stritzker, B., Lindner, J.K.N.
Zdroj: Physica Status Solidi (B); Nov1999, Vol. 216 Issue 1, p807-811, 5p
Databáze: Complementary Index