Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities.

Autor: Kagan, M.S., Landsberg, E.G., Zhdanova, N.G., Altukhov, I.V.
Zdroj: Physica Status Solidi (B); Dec1998, Vol. 210 Issue 2, p891-895, 5p
Databáze: Complementary Index
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