Control of Carrier Concentration by Stimulated Emission in Highly Excited Direct Gap Semiconductors.

Autor: Egorov, V. D., Müller, G. O., Weber, H. H., Jacobson, M. A., Dite, A. F.
Zdroj: Physica Status Solidi (B); Mar1984, Vol. 122 Issue 1, p183-192, 10p
Databáze: Complementary Index
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