Burstein-Moss effect and near-band-edge luminescence spectrum of highly doped indium arsenide.

Autor: Vilkotskii, V. A., Domanevskii, D. S., Kakanakov, R. D., Krasovskii, V. V., Tkachev, V. D.
Zdroj: Physica Status Solidi (B); Jan1979, Vol. 91 Issue 1, p71-81, 11p
Databáze: Complementary Index
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