X-ray and RHEED Characterization of Ge Ions-Implanted Si Crystals Subjected to Pulsed-Laser Annealing.

Autor: Auleytner, J., Fiedorowicz, H., Furmanik, Z., Patron, Z., Regiński, K.
Zdroj: Crystal Research & Technology; 1992, Vol. 27 Issue 7, p959-964, 6p
Databáze: Complementary Index
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