| Autor: |
Nagai, Hisao, Takashima, Seigou, Hiramatsu, Mineo, Hori, Masaru, Goto, Toshio |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/1/2002, Vol. 91 Issue 5, p2615, 7p, 2 Black and White Photographs, 2 Diagrams, 8 Graphs |
| Abstrakt: |
An organic film, FLARE™, is one of the most prospective candidates for interlayer insulating films with low dielectric constants (low k). This organic low k film was etched in inductively coupled high-density plasmas employing N[sub 2]/H[sub 2] and N[sub 2]/NH[sub 3] gases. By changing the mixing ratio of these gases, the anisotropic etching profile was obtained. The etching plasmas were evaluated by quadruple mass spectroscopy and the vacuum ultraviolet absorption spectroscopy employing microplasma as a light source. N and H radical densities were estimated on the order of 10[sup 11]-10[sup 12] cm[sup -3] and 10[sup 12]-10[sup 13] cm[sup -3], respectively. The behavior of etch rate corresponded well to that of H radical density. H radicals were found to be important species for organic low k film etching, while N radicals could not etch without ion bombardments. On the other hand, N radicals were found to be effective for the formation of protection layer on the sidewall against the etching by the H radicals. The ratio of H and N radical densities would be important for the etching of organic low k film employing N-H plasmas. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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