| Autor: |
Gencer, Alp H., Dunham, Scott T. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/1/2002, Vol. 91 Issue 5, p2883, 7p, 13 Graphs |
| Abstrakt: |
Accurate modeling of extended defect kinetics is of primary importance for prediction of transient enhanced diffusion (TED) following ion implantation of silicon. Our previously developed moment-based model [Gencer and Dunham, J. Appl. Phys. 81, 631 (1997)] accurately accounts for formation and evolution of {311} defects and can be used to predict TED under subamorphizing conditions. Using experimental knowledge about the distribution of the {311} defect population, and making approximations on the sums that are encountered in the model, we are able to simplify this model. We demonstrate that these simplifications don't affect the predictive capabilities of the model for {311} defect kinetics and TED. Furthermore, we are able to extend the model, under the same simplifying assumptions, to account for dislocation loop formation from {311} defect unfaulting and dislocation loop evolution, giving a unified model for interstitial aggregation in silicon. The resulting analytical model does not impose any computational speed penalty when the loop extension is turned on, making it applicable to a wide range of problems. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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