Direct band Ge and Ge/InGaAs quantum wells in GaAs.

Autor:	Aleshkin, V. Ya., Dubinov, A. A.
Předmět:	QUANTUM wells GERMANIUM GALLIUM arsenide INDIUM arsenide DIODES
Zdroj:	Journal of Applied Physics; Jun2011, Vol. 109 Issue 12, p123107, 5p, 1 Chart, 7 Graphs
Abstrakt:	The possibility of the creation of direct band Ge and Ge/InGaAs quantum wells in GaAs is shown for small Ge quantum well thickness. Such quantum wells can emit efficiently the radiation in the 1.3-1.5 μm wavelength range and can be used in laser diodes. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu