| Autor: |
Sakai, Joe, Vayunandana Reddy, Y. K., Autret-Lambert, Cécile, Lagrange, Jean-François, Motret, Olivier, Roger, Sylvain, Wolfman, Jérôme |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; May2011, Vol. 109 Issue 10, p104104, 5p, 1 Black and White Photograph, 6 Graphs |
| Abstrakt: |
Ion beam-assisted pulsed laser deposition with an Ar-oxygen ion mixture was used to prepare Ba0.6Sr0.4Ti0.7Zr0.3O3 (BSTZ) thin films on Pt-coated Si substrates. The ion beam with an anode voltage of 600 V was effective to reduce the thermal budget, i.e., to achieve similar crystallinity with approximately 100 °C lower deposition temperature compared to the cases without ionization. It was revealed that the dielectric properties (relative dielectric constant &eh;r and its electric field tunability), out-of-plane lattice parameter of (001)-oriented grains (a001), and the existence of (110)-oriented grains are correlated with one another. Elongation of a001 was suppressed, resulting in large &eh;r values comparable with that of a ceramic bulk of the same composition, in the BSTZ films that contain (110)-oriented grains. Less volume of amorphous BSTZ region is supposed to be playing an important role for the bulklike properties of these BSTZ films. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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