Two-acceptor levels in the band gap of boron-doped diamond semiconductors analyzed by soft x-ray absorption spectroscopy and DV-Xα calculations.

Autor: Muramatsu, Yasuji, Takebe, Toshihiko, Sawamura, Akitaka, Iihara, Junji, Nanba, Akihiko, Imai, Takahiro, Denlinger, Jonathan D., Perera, Rupert C. C.
Zdroj: XRS: X-ray Spectrometry; May/Jun2007, Vol. 36 Issue 3, p162-166, 5p
Databáze: Complementary Index
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