ESD robustness improvement for integrated DMOS transistors -the different gate-voltage dependence of I.

Autor: Hatasako, Kenichi, Yamamoto, Fumitoshi, Uenishi, Akio, Kuroi, Takashi, Maegawa, Shigeto, Fujiwara, Yasufumi
Zdroj: IEEJ Transactions on Electrical & Electronic Engineering; Jul2011, Vol. 6 Issue 4, p361-366, 6p
Databáze: Complementary Index
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