| Autor: |
Lanfei Xie, Xiao Wang, Jiong Lu, Zhenhua Ni, Zhiqiang Luo, Hongying Mao, Rui Wang, Yingying Wang, Han Huang, Dongchen Qi, Rong Liu, Ting Yu, Zexiang Shen, Wu, Tom, Peng, Haiyang, Özyilmaz, Barbaros, Loh, Kianping, Wee, Andrew T. S., Wei Chen |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 5/9/2011, Vol. 98 Issue 19, p193113, 3p, 4 Graphs |
| Abstrakt: |
We report room temperature ferromagnetism in partially hydrogenated epitaxial graphene grown on 4H[Single_Bond]SiC(0001). The presence of ferromagnetism was confirmed by superconducting quantum interference devices measurements. Synchrotron-based near-edge x-ray absorption fine structure and high resolution electron energy loss spectroscopy measurements have been used to investigate the hydrogenation mechanism on the epitaxial graphene and the origin of room temperature ferromagnetism. The partial hydrogenation induces the formation of unpaired electrons in graphene, which together with the remnant delocalized π bonding network, can explain the observed ferromagnetism in partially hydrogenated epitaxial graphene. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
