| Autor: |
Chengao Wang, Chia-Yeh Li, Hasselbeck, Michael P., Imangholi, Babak, Sheik-Bahae, Mansoor |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; May2011, Vol. 109 Issue 9, p093108, 10p, 3 Diagrams, 2 Charts, 13 Graphs |
| Abstrakt: |
External quantum efficiency of semiconductor photonic devices is directly measured by wavelength-dependent laser-induced temperature change (scanning laser calorimetry) with very high accuracy. Maximum efficiency is attained at an optimum photo-excitation level that can be determined with an independent measurement of power-dependent temperature or power-dependent photoluminescence. Time-resolved photoluminescence lifetime and power-dependent photoluminescence measurements are used to evaluate unprocessed heterostructures for critical performance parameters. The crucial importance of parasitic background absorption is discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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