Growth of thick GaN layers on 4-in. and 6-in. silicon (111) by metal-organic vapor phase epitaxy.

Autor: Frayssinet, Eric, Cordier, Yvon, Schenk, H. P. David, Bavard, Alexis
Zdroj: Physica Status Solidi (C); May2011, Vol. 8 Issue 5, p1479-1482, 4p
Databáze: Complementary Index
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