| Autor: |
J F Felix, E A de, E F da, Silva Jr and, W M de |
| Předmět: |
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| Zdroj: |
Journal of Physics D: Applied Physics; May2011, Vol. 44 Issue 20, p205101-205101, 1p |
| Abstrakt: |
We report on the fabrication of silicon carbide/polyaniline heterojunctions produced by spin coating of polyaniline films onto n-type 6H-SiC and 4H-SiC substrates. Atomic force microscopy was used to estimate the surface roughness, and their electrical characteristics were investigated by means of current, capacitance and conductance measurements as a function of frequency and voltages. Reproducible characteristics and rectification ratios as high as 2 x 106 at +-2 V for the 6H-SiC based heterojunctions were obtained. The devices were modelled as Schottky diodes with series resistance and an oxide interfacial oxide layer to account for interface traps. By analysing the forward bias I-V characteristics, we found that the interface trap density for 4H-SiC/PANI heterojunctions is approximately one order of magnitude higher than for 6H-SiC/PANI heterojunctions, which is consistent with previous studies on SiC/SiO2 interface traps. The average value of interface trap densities for 6H-SiC devices was 8.4 x 1011 eV[?]1 cm[?]2 and for 4H-SiC it was 2.7 x 1013 eV[?]1 cm[?]2. These values are in the range of previous reports on Schottky diodes with polymer layers. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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