| Autor: |
N S Daghestani, S Persheyev, M A Cataluna, G Ross, M J Rose |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Jul2011, Vol. 26 Issue 7, p075015-075015, 1p |
| Abstrakt: |
Terahertz generation has been achieved from a photoconductive switch based on hydrogenated nanocrystalline silicon (nc-Si:H), gated by a femtosecond laser. The nc-Si:H samples were produced by a hot wire chemical vapour deposition process, a process with low production costs owing to its higher growth rate and manufacturing simplicity. Although promising ultrafast carrier dynamics of nc-Si have been previously demonstrated, this is the first report on THz generation from a nc-Si:H material. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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