| Autor: |
Fay, Patrick, Jiang Lu, Yanyang Xu, Bernstein, Gary H., Chow, David H., Schulman, Joel N. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Jan2002, Vol. 49 Issue 1, p19, 6p, 2 Diagrams, 6 Graphs |
| Abstrakt: |
Presents a study which examined the microwave frequency performance of indium arsenic/aluminum antimony (Sb)/galium Sb resonant interband tunneling diodes. Design and fabrication of the device; Device performance and modeling; Analysis of the qualitative behavior of the small-signal model parameters. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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