| Autor: |
Lee, Tackhwi, Choi, Kisik, Ando, Takashi, Park, Dae-Gyu, Gribelyuk, Michael A., Kwon, Unoh, Banerjee, Sanjay K. |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Mar2011, Vol. 29 Issue 2, p021209, 7p |
| Abstrakt: |
The authors discuss temperature-dependent dysprosium (Dy) diffusion and the diffusion-driven Dy-silicate formation process in Dy incorporated HfO2. The Dy-induced dipoles are closely related to the Dy-silicate formation at the high-k/SiO2 interfaces since the VFB shift in Dy2O3 is caused by the dipole and coincides with the Dy-silicate formation. Dipole formation is a thermally activated process, and more dipoles are formed at a higher temperature with a given Dy content. The Dy-silicate related bonding structure at the interface is associated with the strength of the Dy dipole moment and becomes dominant in controlling the VFB/VTH shift during the high temperature annealing in the Dy-Hf-O/SiO2 gate oxide system. Dy-induced dipole reduces the degradation of the electron mobility. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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