| Autor: |
Younghun Hwang, Jeongyong Choi, Dang Duc Dung, Yooleemi Shin, Sunglae Cho |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Mar2011, Vol. 109 Issue 6, p063914, 4p, 1 Diagram, 2 Graphs |
| Abstrakt: |
Ferrimagnetic Mn2As thin films with perpendicular magnetic anisotropy were successfully grown on Si(100) by molecular-beam epitaxy. From the reflection high-energy electron diffraction and X-ray diffraction patterns, the orientation of the Mn2As film on Si was along the c-axis in the tetragonal crystal structure. Mn2As film exhibited ferrimagnetic ordering at temperatures greater than 300 K, which differs from antiferromagnetic or paramagnetic behaviors in the bulk form. The magnetic moment of Mn2As determined by saturated magnetization was 0.51 µB per unit cell. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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