| Autor: |
Jamshidi-Roudbari, Abbas, Hatalis, Miltiadis K. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; 04/01/2011, Vol. 58 Issue 4, p1054-1062, 9p |
| Abstrakt: |
In this paper, voltage noise of lateral polysilicon p-i-n diodes, biased at constant current levels, is studied. The polysilicon film that forms the active material of the p-i-n diodes was prepared by the crystallization of amorphous silicon either by the solid phase crystallization (SPC) or the sequential lateral solidification (SLS) method; two different thicknesses of 100 and 50 nm were also investigated. Measurement results of the voltage noise at frequency bandwidth from 500 Hz to 1 MHz for polysilicon p-i-n diodes with different crystallization methods and active material thicknesses are presented. The effects of grain size, i-region geometry, and the biasing current on the voltage noise of p-i-n diodes are studied. Furthermore, different methods of improving the voltage noise of p-i-n diodes are also discussed, and experimental results are demonstrated. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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