| Autor: |
Villegas-Lelovsky, L, Teodoro, MD, Lopez-Richard, V, Calseverino, C, Malachias, A, Marega, E, Liang, BL, Mazur, Yu, Marques, GE, Trallero-Giner, C, Salamo, GJ |
| Předmět: |
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| Zdroj: |
Nanoscale Research Letters; Jan2011, Vol. 6 Issue 1, p1-12, 12p |
| Abstrakt: |
method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the valence-band anisotropic effective masses and strain effects must be used to describe the behavior of the photoluminescence emission, proposed as a clean tool for the characterization of dot anisotropy and/or inter-dot coupling. Under special growth conditions, such as substrate temperature and Arsenic background, 1D chains of InGa As quantum dots were grown by molecular beam epitaxy. Grazing-incidence X-ray diffraction measurements directly evidence the strong strain anisotropy due to the formation of quantum dot chains, probed by polarization-resolved low-temperature photoluminescence. The results are in fair good agreement with the proposed model. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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